cny17 www.vishay.com vishay semiconductors rev. 1.9, 25-oct-12 1 document number: 83606 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 optocoupler, phototransistor output, with base connection description the cny17 is an optically coupled pair consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon npn phototransitor. signal information, including a dc level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. the cny17 can be used to repl ace relays and transformers in many digital interface applications, as well as analog applications such as crt modulation. features ? isolation test voltage: 5000 v rms ? long term stability ? industry standard dual-in-line package ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 agency approvals ? underwriters lab file no. e52744 ? cul tested to csa 22.2 bulletin 5a ? din en 60747-5-5 (vde 0884-5) ? bsi iec 60950, iec 60065 ?fimko ?cqc note (1) also available in tubes, do not put t on the end. b c e a c nc 1 2 3 6 5 4 i179004-14 ordering information cny 1 7 - # x 0 # # t part number ctr bin package option tape and reel agency certified/package ctr (%) ul, cul, bsi, fimko 40 to 80 63 to 125 100 to 200 160 to 320 dip-6 cny17-1 cny17-2 CNY17-3 cny17-4 dip-6, 400 mil, option 6 cny17-1x006 cny17-2x006 CNY17-3x006 cny17-4x006 smd-6, option 7 cny17-1x007t (1) cny17-2x007t (1) CNY17-3x007t (1) cny17-4x007t (1) smd-6, option 9 cny17-1x009t (1) cny17-2x009t (1) CNY17-3x009t (1) cny17-4x009t (1) vde, ul, cul, bsi, fimko 40 to 80 63 to 125 100 to 200 160 to 320 dip-6 cny17-1x001 cny17-2x001 CNY17-3x001 cny17-4x001 dip-6, 400 mil, option 6 cny17-1x016 cny17-2x016 CNY17-3x016 cny17-4x016 smd-64, option 7 cny17-1x017 cny17-2x017t (1) CNY17-3x017t (1) cny17-4x017t (1) smd-6, option 9 - cny17-2x019t (1) -- 7.62 mm 10.16 mm > 8 mm 8 mm typ. option 7 option 6 option 9 dip-6
cny17 www.vishay.com vishay semiconductors rev. 1.9, 25-oct-12 2 document number: 83606 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? stresses in excess of the abso lute maximum ratings can cause permanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those give n in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (1) refer to reflow profile for soldering conditions for surface mount ed devices (smd). refer to wave profile for soldering conditi ons for through hole devices (dip). note ? minimum and maximum values were tested requierements. typical va lues are characteristics of the device and are the result of e ngineering evaluations. typical values are for information only and are not part of the testing requirements. absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input reverse voltage v r 6v forward current i f 60 ma forward surge current t p 10 s i fsm 2.5 a led power dissipation at 25 c p diss 70 mw output collector emitter breakdown voltage bv ceo 70 v emitter base breakdown voltage bv ebo 7v collector current i c 50 ma t p /t = 0.5, t p 10 ms i c 100 ma power dissipation p diss 150 mw coupler isolation test voltage betwee n emitter and detector t = 1 s v iso 5000 v rms creepage distance 7mm clearance distance 7mm isolation thickness betw een emitter and detector 0.4 mm comparative tracking index per din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 110 c soldering temperature (1) 2 mm from case, 10 s t sld 260 c total power dissipation p diss 220 mw electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit input forward voltage i f = 60 ma v f 1.39 1.65 v breakdown voltage i r = 10 a v br 6v reverse current v r = 6 v i r 0.01 10 a capacitance v r = 0 v, f = 1 mhz c o 25 pf thermal resistance r th 750 k/w output collector emitter capacitance v ce = 5 v, f = 1 mhz c ce 5.2 pf collector base capacitance v ce = 5 v, f = 1 mhz c cb 6.5 pf emitter base capacitance v ce = 5 v, f = 1 mhz c eb 7.5 pf thermal resistance r th 500 k/w coupler collector emitter, saturation voltage v f = 10 ma, i c = 2.5 ma v cesat 0.25 0.4 v coupling capacitance c c 0.6 pf collector emitter, leakage current v ce = 10 v cny17-1 i ceo 250na cny17-2 i ceo 250na CNY17-3 i ceo 5 100 na cny17-4 i ceo 5 100 na
cny17 www.vishay.com vishay semiconductors rev. 1.9, 25-oct-12 3 document number: 83606 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - test circuit, non-saturated operation fig. 2 - test circuit, saturated operation fig. 3 - switching times current transfer ratio (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit i c /i f v ce = 5 v, i f = 10 ma cny17-1 ctr 40 80 % cny17-2 ctr 63 125 % CNY17-3 ctr 100 200 % cny17-4 ctr 160 320 % v ce = 5 v, i f = 1 ma cny17-1 ctr 13 30 % cny17-2 ctr 22 45 % CNY17-3 ctr 34 70 % cny17-4 ctr 56 90 % switching characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit linear operation (without saturation) turn-on time i f = 10 ma, v cc = 5 v, r l = 75 t on 3s rise time i f = 10 ma, v cc = 5 v, r l = 75 t r 2s turn-off time i f = 10 ma, v cc = 5 v, r l = 75 t off 2.3 s fall time i f = 10 ma, v cc = 5 v, r l = 75 t f 2s cut-off frequency i f = 10 ma, v cc = 5 v, r l = 75 f co 110 khz switching operation (with saturation) turn-on time i f = 20 ma cny17-1 t on 3s i f = 10 ma cny17-2 t on 4.2 s CNY17-3 t on 4.2 s i f = 5 ma cny17-4 t on 6s rise time i f = 20 ma cny17-1 t r 2s i f = 10 ma cny17-2 t r 3s CNY17-3 t r 3s i f = 5 ma cny17-4 t r 4.6 s turn-off time i f = 20 ma cny17-1 t off 18 s i f = 10 ma cny17-2 t off 23 s CNY17-3 t off 23 s i f = 5 ma cny17-4 t off 25 s fall time i f = 20 ma cny17-1 t f 11 s i f = 10 ma cny17-2 t f 14 s CNY17-3 t f 14 s i f = 5 ma cny17-4 t f 15 s channel i channel ii 95 10804-3 r g = 50 t p t p = 50 s t = 0.01 + 5 v i f 0 50 r l i f oscilloscope r l = 1 m c l = 20 pf channel i channel ii 95 10843 r g = 50 t p t p = 50 s t = 0.01 + 5 v i c i f 0 50 1 k i f = 10 ma oscilloscope r l c l 20 pf 1 m
cny17 www.vishay.com vishay semiconductors rev. 1.9, 25-oct-12 4 document number: 83606 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 4 - forward voltage vs. forward current fig. 5 - collector current vs. collector emitter voltage (ns) fig. 6 - collector current vs. collector emitter voltage (sat) fig. 7 - leakage current vs. ambient temperature fig. 8 - normalized ctr (n s) vs. ambient temperature fig. 9 - normalized ctr (sat) vs. ambient temperature 0.6 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.8 0.1 1 10 100 i f - forward current (ma) v f - forward voltage (v) t amb = - 55 c 1.5 0.7 t amb = - 40 c t amb = 100 c t amb = 75 c t amb = 50 c t amb = 25 c t amb = 0 c t amb = - 25 c 1.6 1.7 0 20 30 40 50 60 01 78 v ce - collector emitter voltage (n s ) (v) i c - collector current (ma) 10 6 5 4 3 2 i f = 20 ma i f = 15 ma i f = 10 ma i f = 30 ma i f = 5 ma 0 10 15 20 25 00.4 v ce - collector emitter voltage ( s at) (v) i c - collector current (ma) 5 0.3 0.2 0.1 i f = 10 ma i f = 25 ma i f = 5 ma i f = 2 ma i f = 1 ma 0.001 0.01 0.1 10 1 100 1000 10 000 - 60 100 t amb - ambient temperature (c) i ce0 - leakage current (na) v ce = 40 v - 40 80 60 40 20 0 - 20 i f = 0 ma v ce = 12 v v ce = 24 v 0 0.2 0.6 0.4 0.8 1.0 1.2 - 60 100 t amb - ambient temperature (c) ctr norm - normalized ctr (n s ) - 40 80 60 40 20 0 - 20 i f = 5 ma i f = 10 ma i f = 1 ma v ce = 5 v 0 0.2 0.6 0.4 0.8 1.0 1.2 - 60 100 t amb - ambient temperature (c) ctr norm - normalized ctr ( s at) - 40 80 60 40 20 0 - 20 i f = 5 ma i f = 10 ma i f = 1 ma v ce = 0.4 v
cny17 www.vishay.com vishay semiconductors rev. 1.9, 25-oct-12 5 document number: 83606 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 10 - normalized ctr (ns) vs. forward current fig. 11 - normalized ctr (sat) vs. forward current fig. 12 - ctr frequency vs. phase angle fig. 13 - ctr frequenc y vs. collector current fig. 14 - switching time vs. load resistance 0 0.2 0.6 0.4 0.8 1.0 1.2 0.1 100 i f - forward current (ma) ctr norm - normalized ctr (n s ) 110 t amb = - 55 c t amb = - 40 c t amb = 0 c t amb = 25 c t amb = 50 c t amb = 75 c t amb = 100 c v ce = 5 v 0 0.2 0.6 0.4 0.8 1.0 1.2 0.1 100 i f - forward current (ma) ctr norm - normalized ctr ( s at) 110 t amb = - 55 c t amb = - 40 c t amb = 0 c t amb = 25 c t amb = 50 c t amb = 75 c t amb = 100 c v ce = 0.4 v - 160 - 140 - 60 - 40 0 1 1000 f - fre q uency (khz) pha s e (deg) - 20 10 100 v ce = 5 v - 80 - 100 - 120 1 10 1000 0.1 100 i c - collector current (ma) f ctr - ctr fre q uency (khz) 100 110 v cc = 5 v 0.1 1 10 1000 0.1 100 r l - load re s i s tance (k ) t on , t off - s witching time ( s ) 100 110 v ce = 5 v, i f = 10 ma t on t off
cny17 www.vishay.com vishay semiconductors rev. 1.9, 25-oct-12 6 document number: 83606 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters package marking notes ? vde logo is only marked on option 1 parts. option information is no t marked on the part. ? tape and reel suffix (t) is not part of the package marking. 22530 0.26 3.5 0.3 7.62 0.3 0.5 0.1 2.54 0.25 3.3 0.5 6.5 0.5 7.3 0.5 7.62 to 9.98 1.1 0.1 0.5 typ. 2.8 0.5 654 123 20802-34 10.16 typ. 7.62 typ. option 6 8 min. 7.62 typ. 3.5 0.3 0.6 min. 10.3 max. 0.35 0.25 option 7 option 9 7.62 typ. 0.6 min. 0.1 0.1 3.5 0.3 3.5 0.3 0.1 min. 2.7 min. 8.16 0.8 10.16 0.3 2.54 r 0.25 1.78 0.76 1.52 8 min. 11.05 2.54 r 0.25 1.78 0.76 1.52 8 min. 11.05 CNY17-3 v yww 25 pin 1 i.d.
cny17 www.vishay.com vishay semiconductors rev. 1.9, 25-oct-12 7 document number: 83606 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 tube and tape information fig. 15 - tape and reel drawing, 1000 units per reel devices per tube type units/tube tubes/box units/box dip-6 50 40 2000 22537-1 ? 1.55 0.05 1.75 0.1 12 0.1 0.3 0.05 2 0.1 4 0.1 7.5 0.1 16 0.3
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